? 2009 ixys corporation, all rights reserved ds99432f(08/09) polarhv tm hiperfet power mosfet ixfa10n80p IXFP10N80P ixfq10n80p ixfh10n80p n-channel enhancement mode avalanche rated fast intrinsic diode features z international standard packages z avalanche rated z low package inductance z easy to drive and to protect advantages z easy to mount z space savings z high power density applications z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 2.5ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 150 c 500 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 1.1 v dss = 800v i d25 = 10a r ds(on) 1.1 t rr 250ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c, r gs = 1m 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c10a i dm t c = 25 c, pulse width limited by t jm 30 a i a t c = 25 c5a e as t c = 25 c 600 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220,to-247) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g to-247 6.0 g g = gate d = drain s = source tab = drain to-263 aa (ixfa) g s d (tab) g d s to-220ab (ixfp) d (tab) to-3p (ixfq) g d s d (tab) to-247 (ixfh) d (tab) g d s
ixfa10n80p IXFP10N80P ixfq10n80p ixfh10n80p ixys reserves the right to change limits, test conditions, and dimensions. note 1. pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 7 11 s c iss 2050 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 172 pf c rss 16 pf t d(on) 21 ns t r 22 ns t d(off) 62 ns t f 22 ns q g(on) 40 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 12 nc q gd 14 nc r thjc 0.42 c/w r thcs (to-220) 0.50 c/w r thcs (to-247 & to-3p) 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max i s v gs = 0v 10 a i sm repetitive, pulse widthllimited by t jm 30 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 200 250 ns i rm 3.0 a q rm 0.6 c i f = 10a, v gs = 0v -di/dt = 100a/ s v r = 100v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 5 (external) fig. 1. forward-bias safe operating area 0.1 1.0 10.0 100.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1m s 100s 25s
? 2009 ixys corporation, all rights reserved ixfa10n80p IXFP10N80P ixfq10n80p ixfh10n80p fig. 3. extended output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 036912151821242730 v d s - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 4. output characteristics @ 125 o c 0 1 2 3 4 5 6 7 8 9 10 036912151821242730 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. output characteristics @ 25 o c 0 1 2 3 4 5 6 7 8 9 10 02468101214 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 5. r ds(on ) normalized to 0.5 i d25 v alue vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 10a i d = 5a v gs = 10v fig. 7. drain current vs. case temperature 0 1 2 3 4 5 6 7 8 9 10 11 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 6. r ds(on) normalized to 0.5 i d25 value vs. i d 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 2 4 6 8 10 12 14 16 18 20 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v
ixfa10n80p IXFP10N80P ixfq10n80p ixfh10n80p ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: f_10n80p(5j)8-18-09-a fig. 12. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 11. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v g s - volts v ds = 400v i d = 5a i g = 10ma fig. 8. input admittance 0 1 2 3 4 5 6 7 8 9 10 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v g s - volts i d - amperes t j = 125 o c 25 o c - 40 o c fig. 9. transconductance 0 2 4 6 8 10 12 14 16 18 012345678910 i d - amperes g f s - siemens t j = - 40 o c 25 o c 125 o c fig. 10. source current vs. source-to-drain voltage 0 3 6 9 12 15 18 21 24 27 30 0.40.50.60.70.80.91.01.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 13. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z ( t h ) j c - o c / w
? 2009 ixys corporation, all rights reserved ixfa10n80p ixfh10n80p IXFP10N80P ixfq10n80p to-220 (ixfp) outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-3p (ixfq) outline pins: 1 - gate 2 - drain 3 - source 4 - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixfh) outline 1 2 3 pins: 1 - gate 2 - drain 3 - source 4 - drain to-263 (ixfa) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 1. gate 2. collector 3. emitter 4. collector bottom side
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